Conditioning of a reaction chamber

Details Conditioning of a reaction chamber Conditioning of a reaction chamber

2007-09-25

2007-09-25

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21256

Reexamination Certificate

active

11273820

ABSTRACT:
A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber during the etching of a photoresist layer of a semiconductor wafer within the reaction chamber and the environment is regulated to form the polymer on the interior surface of the chamber. The polymer thus formed reduces the standard deviation of the critical dimensions of the semiconductor wafer. A method for the manufacture of integrated circuits is also provided.

REFERENCES:
patent: 3619249 (1971-11-01), Cannon
patent: 4397724 (1983-08-01), Moran
patent: 6080680 (2000-06-01), Lee et al.
patent: 6350697 (2002-02-01), Richardson et al.
patent: 6776851 (2004-08-01), Singh et al.
patent: 2002/0086118 (2002-07-01), Chang et al.

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