Conditioning CMP polishing pad using a high pressure fluid

Details Conditioning CMP polishing pad using a high pressure fluid Conditioning CMP polishing pad using a high pressure fluid

1997-10-30

1999-09-28

Scherbel, David A.

Abrading

Abrading process

With tool treating or forming

451443, 451444, B24B 100

Patent

active

059577576

ABSTRACT:
The present invention advantageously provides a method for conditioning a polishing pad used for chemical mechanical polishing of a semiconductor wafer surface. The method involves directing a fluid at a relatively high pressure toward the surface of the pad, thereby roughening the surface of the pad and removing particles embedded in pores of the pad. This process provides for uniform conditioning across the surface of the pad and excludes the use of particles which might become disposed on the pad, unlike some other conventional conditioning methods. The exclusion of abrasive particles prevents scratching of wafers which may subsequently undergo CMP using the polishing pad. The conditioning fluid hereof may, among other things, be a typical CMP slurry or variation thereof, or may be deionized water.

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