Conditioned semiconductor substrates

Details Conditioned semiconductor substrates Conditioned semiconductor substrates

1984-06-25

1986-11-11

Hearn, Brian E.

Metal treatment

Barrier layer stock material, p-n type

148 15, 148DIG60, 29576T, 156DIG66, H01L 21324, H01L 21322

Patent

active

046220828

ABSTRACT:
N+ type semiconductor substrates containing oxygen are thermally treated to enhance internal gettering capabilities by heating at 1050.degree. to 1200.degree. C., then at 500.degree. to 900.degree. C. and finally at 950.degree. to 1250.degree. C.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4376657 (1983-03-01), Nagasawa et al.
Nagasawa et al, "A New Intrinsic Gettering Technique . . . ", Appl. Phys. Lett., 37(7), Oct. 1980, pp. 622-624.
Kugimiya et al, "Denoded Zone & Microdefet Formation . . . " Semiconductor Silicon 1981, Electrochemical Society Inc., pp. 294.varies.303.
Craven et al, "Internal Gettering in Silicon" Solid State Technology, Jul. 1981, pp. 55-61.
Colclaser, "Microelectronics: Processing & Device Design", John Wiley & Sons, NY, 1980, pp. 62-66.
Shiraki, "Silicon Device Consideration . . . ", Semiconductor for Silicon, 1977, Electrochem. Soc. pp. 546-558.
Gaworzewski et al, "On the Out-Diffusion of Oxygen from Silicon", Phys. Stat., Sol.(a) 67, 511-516 (1981).
Huber et al, "Precipitation Process Design for Denoded Zone Formation in CZ-Silicon Wafers", Solid State Tech. Aug. 1983, pp. 137-143.
Tice et al, "Precipitation of Oxygen & Intrinsic Gettering in Silicon" Defects in Semiconductors, North Holland Inc., 1981, pp. 367-380.
Craven "Oxygen Precipitation in Czochralski Silicon", Semiconductor Silicon 1981, Electrochem Soc. Inc., pp. 254-271.
Series et al, "Influence of Precipitate Size & Capillary by Effects . . . " Semiconductor Silicon 1981, Electrochem Soc. Inc. , pp. 304-312.

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