Concurrent triple-band gain amplifier for multi-standard...

Amplifiers – With semiconductor amplifying device – Including frequency-responsive means in the signal...

Reexamination Certificate

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C330S306000

Reexamination Certificate

active

11147458

ABSTRACT:
The present invention discloses a gain amplifier, capable of concurrently operating at three different frequency bands. The gain amplifier comprises an amplification stage for amplifying a signal applied to an input of the amplifier and a triple-band resonance load connected between a DC bias voltage and a DC bias input of the amplification stage. The triple-band resonance load uses a set of reactive elements to provide match in a first frequency band, a second frequency band and in a third frequency band, such as at 2.4 GHz, 5.8 GHz and 9.0 GHz. According to the gain amplifier of the present invention, it can effectively provide triple-band signal amplification and in-band interference suppression for various multi-standard coexist communication systems.

REFERENCES:
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patent: 5300895 (1994-04-01), Jones
patent: 6215359 (2001-04-01), Peckham et al.
patent: 6252461 (2001-06-01), Raab
Article entitled “Concurrent Multiband Low-Noise Amplifiers-Theory, Design, and Applications” by Hossein Hashemi et al., published in IEEE Transactions on Microwave Theory and Techniques, vol. 50, No. 1, Jan. 2002., pp. 288-301.
Article entitled “A 900-MHz/1.8-GHz CMOS Receiver for Dual-Band Applications” by Stephen Wu et al., published in IEEE Journal of Solid-State Circuits, vol. 33, No. 12, Dec. 1998, pp. 2178-2185.
Article entitled “A 2.7-V 900-MHz/1.9-GHz Dual-Band Transceiver IC for Digital Wireless Communication” by Joo Leong et al., published in IEEE Journal of Solid-State Circuits, vol. 34, No. 3, Mar. 1999, pp. 286-291.
Article entitled “A Dual-Band RF Front-End for WCDMA and GSM Applications” by Jussi Ryynanen et al., published in IEEE Journal of Solid-State Cicuits, vol. 36, No. 8, Aug. 2001, pp. 1198-1204.
Article entitled “A New Wide-Band Darlington Amplifier” by Armijo et al. published in the IEEE Journal of Solid State Circuits, vol. 24, No. 4, Aug. 1989, pp. 1105 through 1109.

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