Concurrent programming and program verification of floating...

Details Concurrent programming and program verification of floating... Concurrent programming and program verification of floating...

2008-09-23

2008-09-23

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S024000

Reexamination Certificate

active

11487863

ABSTRACT:
A program voltage is applied to the drain electrode of a floating gate transistor to program the floating gate transistor. Concurrent with the application of the program voltage, a current based on the voltage at the source electrode of the floating gate transistor is compared with a threshold current to verify the programming of the floating gate transistor. When the bit cell current falls below the threshold current, the floating gate transistor is considered to be sufficiently programmed and the next floating gate transistor to be programmed is selected. Further, the program voltage supply emulates the selection circuitry used to select between the bit cells so as to model the voltage drop caused by the selection circuitry between the program voltage supply and the drain electrode of the floating gate transistor being programmed. The program voltage supply adjusts the output program voltage based on the modeled voltage drop.

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