Concept of compensating for piezo influences on integrated...

Data processing: measuring – calibrating – or testing – Calibration or correction system – Circuit tuning

Reexamination Certificate

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C324S251000, C324S252000, C327S511000, C257S427000, C323S293000, C323S294000, C073S001150, C073S001480, C073S035110, C073S514340, C073S721000, C073S727000

Reexamination Certificate

active

07437260

ABSTRACT:
A semiconductor chip includes a first functional element having a first electronic functional-element parameter exhibiting a dependence relating to the mechanical stress present in the semiconductor circuit chip, and being configured to provide a first output signal, a second functional element having a second electronic functional-element parameter exhibiting a dependence in relation to the mechanical stress present in the semiconductor circuit chip, and being configured to provide a second output signal in dependence on the second electronic functional-element parameter and the mechanical stress, and a combination means for combining the first and second output signals to obtain a resulting output signal exhibiting a predefined dependence on the mechanical stress present in the semiconductor circuit chip, the first and second functional elements being integrated on the semiconductor circuit chip and arranged, geometrically, such that that the first and second functional-element stress influence functions are identical within a tolerance range.

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Fruett, Fabiano, et al., “The Piezojunction Effect in NPN and PNP Vertical Transistors and its Influence on Silicon Temperature Sensors”, Delft University of Technology, Sensors and Actuators 85 (2000), pp. 70-74, 2000.
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Jaeger, Richard C., et al., “CMOS Stress Sensors on (100) Silicon”, Jounal of Solid-State Circuits, vol. 35, No. 1, pp. 85-95, Jan. 2000.

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