Concentration graded carbon doped oxide

Details Concentration graded carbon doped oxide Concentration graded carbon doped oxide

2006-08-15

2006-08-15

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23144, C257SE23154

Reexamination Certificate

active

07091615

ABSTRACT:
A process for forming an interlayer dielectric layer is disclosed. The method comprises first forming a carbon-doped oxide (CDO) layer with a first concentration of carbon dopants therein. Next, the CDO layer is further formed with a second concentration of carbon dopants therein, wherein the first concentration is different than the second concentration.

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Gernamy, current address: Infineon technologies, Inc. IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533, USA, date unknown.

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