Compressively stresses titanium metallurgy for contacting passiv

Details Compressively stresses titanium metallurgy for contacting passiv Compressively stresses titanium metallurgy for contacting passiv

1982-12-23

1985-04-30

Edlow, Martin H.

357 67, H01L 2348, H01L 2946

Patent

active

045147515

ABSTRACT:
Contact metallurgy is disclosed for passivated semiconductor devices. The metallurgy comprises a compressively stressed, oxygen-containing titanium underlayer covered by a solder-bondable layer extending through via holes in dielectric material on the semiconductor device. The solder bondable layer is either nickel or ruthenium, where lower current densities are encountered or a composite of layers of copper, titanium, copper and gold for higher current densities.

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IBM Technical Disclosure Bulletin, vol. 16, No. 1, Jun. 1973, "Multiple Reflow Titanium-Platinum Metallurgy", L. F. Miller, p. 39.

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