Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2007-03-06
2007-03-06
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S018000, C257S019000, C257S627000, C257S750000, C257S798000
Reexamination Certificate
active
10875727
ABSTRACT:
A structure for conducting carriers and method for forming is described incorporating a single crystal substrate of Si or SiGe having an upper surface in the <110> and a psuedomorphic or epitaxial layer of SiGe having a concentration of Ge different than the substrate whereby the psedomorphic layer is under strain. A method for forming semiconductor epitaxial layers is described incorporating the step of forming a psuedomorphic or epitaxial layer in a rapid thermal chemical vapor deposition (RTCVD) tool by increasing the temperature in the tool to about 600° C. and introducing both a Si containing gas and a Ge containing gas. A method for chemically preparing a substrate for epitaxial deposition is described including the steps of immersing a substrate in a series of baths containing ozone, dilute HF, deionized water, HCL acid and deionized water, respectively, followed by drying the substrate in an inert atmosphere to obtain a substrate surface free of impurities and with a root mean square (RMS) surface roughness of less than 0.1 run.
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Chan Kevin K.
Guarini Kathryn W.
Ieong Meikel
Rim Kern
Yang Min
Soward Ida M.
Trepp Robert M.
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