Compression-type power semiconductor device

Details Compression-type power semiconductor device Compression-type power semiconductor device

1995-12-08

1997-06-17

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257628, H01L 2974, H01L 2904

Patent

active

056400241

ABSTRACT:
A compression-type semiconductor device comprises a silicon substrate in which crystal orientation between main faces opposite to each other is not larger than <1,0,0> .+-.27.5.degree.; cathode and gate electrodes formed on one of the main faces of the silicon substrate; an anode electrode formed on the other of the main faces of the silicon substrate; a cathode thermal compensation plate for the cathode and gate electrodes; and an anode thermal compensation plate for the anode electrode.

REFERENCES:
patent: 3899363 (1975-08-01), Dennard et al.

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