Compression bonded type semiconductor element and semiconductor

Details Compression bonded type semiconductor element and semiconductor Compression bonded type semiconductor element and semiconductor

1997-01-07

1998-07-07

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

257182, 257150, 257688, 257689, 257718, 257726, 257730, H01L 2348

Patent

active

057773513

ABSTRACT:
A compression bonded type semiconductor element having a ring-shaped gate terminal in the form of an annular metal disk projecting through the side of an insulating cylinder. The ring-shaped gate terminal includes an inner circumferential planar portion which is disposed so as to be slidable on an annular ring gate electrode. The annular ring gate electrode is in contact with a gate electrode formed on a semiconductor substrate, and the ring gate electrode is pressed against the gate electrode via the ring-shaped gate terminal by an elastic body.

REFERENCES:
patent: 3225416 (1965-12-01), Diebold
patent: 3837000 (1974-09-01), Platzoeder et al.
patent: 3931635 (1976-01-01), Sundstrom
patent: 5345096 (1994-09-01), Gruning

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