Compounds and infrared devices including stoichiometric semicond

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

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2503384, 25037012, 2504931, 257615, 423299, H01L 29205

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active

RE0363154

ABSTRACT:
A semiconductor layer of In.sub.1-x Tl.sub.x Q carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As.sub.1-y P.sub.y and 0<x<1, 0<y<1.

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