Compounds and infrared devices including In.sub.1-x Tl.sub.x Q,

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257615, 2503384, 25037012, 2504931, 423299, H01L 2905

Patent

active

054830885

ABSTRACT:
A semiconductor layer of In.sub.1-x Tl.sub.x Q carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As.sub.1-y P.sub.y and 0<x<1, 0<y<1.

REFERENCES:
patent: Re29009 (1976-10-01), Jeffers
patent: 3805601 (1974-04-01), Jeffers
patent: 3849874 (1974-11-01), Jeffers
patent: 3875451 (1975-04-01), Bachmann et al.
patent: 3929970 (1975-12-01), Isaacs et al.
patent: 4291323 (1981-09-01), Bachmann
patent: 4622845 (1986-11-01), Ryan et al.
patent: 4723448 (1988-02-01), Veligdan
patent: 4955699 (1990-09-01), Singh et al.
Schilfgaarde et al., "InTlSb: An Infrared Detector Material?", Appl. Phys. Lett., vol. 62, No. 16, 1993, pp. 1857-1859.
Razeghi et al., "In.sub.1-x Tl.sub.x Sb for Long-Wavelength Infrared Photodetectors", The Electrochemical Society, 184th Meeting, New Orleans, Louisiana, Oct. 10-15, 1993.
Choi et al., "Characterization of InTlSb/InSb Grown by Low-Pressure Metal-Organic Chemical Vapor Deposition on a GaAs Substrate", J. Appl. Phys., vol. 75, No. 6, 1994, pp. 3196-3198.
Liao et al., "Electronic Structure of the III-V Tetramer Clusters and Their Positive Ions", Journal of Chemical Physics, 1992, vol. 96, No. 12, pp. 8938-8947. (Abstract Only).
Fung, "Convergent Beam Electron Diffraction Study of Semiconductor Superlattices and High Tc Superconducting Oxides", Application of Electron Microscopy to Materials Science, Held: Gauonzhou, China, 7-9 Aug. 1988, Diffusion and Defect Data-Solid State Data, Part B, (Solid State Phenomena), 1989, vol. B5, pp. 85-101, (Abstract Only).
Finch et al., "Noise Characterization Mode-Locked Laser Sources Using High-Speed InGaAs Photodetectors", IEE Colloquium on `Applications of Ultrashort Pulses for Optoelectronics`, (Digest No. 87), Held: London, UK, 26 May 1989, (Abstract Only).
Karimov et al., "Thermoelectric Properties of TlPse", Inorganic Materials, 1988, vol. 24, No. 3, pp. 406-408 (Abstract Only).
Choi, Growth and Characterization of InSb and InTlSb for Long Wavelength Infrared Detector Applications, doctoral thesis, Northwestern University, Nov. 1993.
Staveteig et al., Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition, Appl. Phys. Lett 64(4), 24 Jan. 1994, pp. 460-462.
Razeghi et al., Growth of InTlSb for Long-Wavelength Infrared Detector Applications, Center for Quantum Devices, Northwestern University, Jun. 1994.
Bliss et al., Phosphorus-rich InP Grown by a One Step In-situ MLEK Crystal Growth Process, 5th International Conference in InP and Related Materials. (No Date).
Zach et al., Determination of Fe.sup.2+ and Fe.sup.3+ Concentrations in Semi-insulating InP:Fe, 4th International Conference on InP and Related Materials, pp. 638-640, Apr. 21-24, 1992.
Carlson et al., Near Infrared Microscopy for the Determination of Dopant Distributions and Segregation in N-Type/InP, Fourth International Conference on InP and Related Materials, Apr. 21-24, 1992, pp. 515-517.
Nosov, V. B., et al. "Calorimetric measurements of the volume and surface absorption of IR materials in 5-6 .mu.m spectral region," Soviet Journal of Optical Technology Apr. 1989, vol. 56, No. 4, pp. 238-240.
Bliss et al., In-Situ Synthesis and Crystal Growth of High Purity InP, 4th Int. Conf. on InP and Related Materials, Apr. 21-24, 1992, pp. 262-265.
Bliss et al., MLEK Crystal Growth of Large Diameter (100) Indium Phosphate, Journal of Crystal Growth, 128 (1993), pp. 451-456.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Compounds and infrared devices including In.sub.1-x Tl.sub.x Q, does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compounds and infrared devices including In.sub.1-x Tl.sub.x Q, , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compounds and infrared devices including In.sub.1-x Tl.sub.x Q, will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1304277

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.