Compounds and compositions for coating glass with silicon oxide

Details Compounds and compositions for coating glass with silicon oxide Compounds and compositions for coating glass with silicon oxide

1995-06-07

1997-02-04

Brunsman, David

Compositions: coating or plastic

Coating or plastic compositions

Silicon containing other than solely as silicon dioxide or...

4272552, C09D 500

Patent

active

055993877

ABSTRACT:
Silicon compounds useful as coating reactants for the chemical vapor deposition of silicon oxide are disclosed, along with compounds useful as accelerants to increase the deposition rate of silicon oxide. The silicon-containing precursor comprises the structural formula ##STR1## wherein R.sup.1 is an alkyl, alkenyl, alkynyl or aryl radical which may be substituted, and R.sub.2 is a functional group which increases the reactivity of the silicon compound by withdrawing electron density away from the silicon atom, such as hydrogen, halogen, alkenyl, alkynyl, halogenated alkyl and perhalogenated alkyl radicals. The accelerant is a compound selected to take advantage of the partial positive charge on the silicon atom. Such accelerant compounds include Lewis acids and bases; water; ozone; trivalent compounds of nitrogen, boron and phosphorus; tetravalent compounds of sulfur and selenium; pentavalent compounds of phosphorus and a variety of metal compounds. Also disclosed are compositions including an additional metal-containing coating precursor, such as an organotin compound, to deposit another metal oxide along with silicon oxide.

REFERENCES:
patent: 3378396 (1968-04-01), Zaromb
patent: 3674453 (1972-07-01), Loukes et al.
patent: 3681042 (1972-08-01), Edwards et al.
patent: 4146657 (1979-03-01), Gordon
patent: 4187336 (1980-02-01), Gordon
patent: 4206252 (1980-06-01), Gordon
patent: 4265974 (1981-05-01), Gordon
patent: 4308316 (1981-12-01), Gordon
patent: 4377613 (1983-03-01), Gordon
patent: 4386117 (1983-05-01), Gordon
patent: 4419386 (1983-12-01), Gordon
patent: 4440822 (1984-04-01), Gordon
patent: 4468420 (1984-08-01), Kawahara et al.
patent: 4469045 (1984-09-01), Chesworth
patent: 4590096 (1986-05-01), Lindner
patent: 4853257 (1989-08-01), Henery
patent: 4894352 (1990-01-01), Lane et al.
patent: 5168003 (1992-12-01), Proscia
patent: 5221352 (1993-06-01), Terneu et al.
patent: 5248545 (1993-09-01), Proscia
patent: 5271960 (1993-12-01), Proscia
patent: 5401305 (1995-03-01), Russo et al.
Strong, J.; "Practical Applications of High and Low-Reflecting Films on Glass", Le Journal De Physique Et Le Radium, (Jul. 11, 1950;) pp. 441-443.
Delperier, B. et al.; "Analysis and Modelling of Tetraethoxysilane Pyrolysis"; Journal of Analytical and Applied Pyrolysis, 13 (1988) pp. 141-149.
Inoue, K. et al.; "Low Temperature Growth of SiO.sub.2 Thin Film by Double-Excitation Photo-CVD"; Japanese Journal of Applied Physics; vol. 26, No. 6, (Jun., 1987,) pp. 805-811.
Toyoda, Y. et al.; "Preparation of SiO.sub.2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect"; Japanese Journal of Applied Physics; vol. 26, No. 6, (Jun. 1987,) pp. 835-840.
Chang, C. P. et al.; "Ion and Chemical Radical Effects on the Step Coverage of Plasma Enhanced Chemical Vapor Deposition Tetraethylorthosilicate Films"; J. Appl. Phys.; 67(4), 15 (Feb. 1990).
Niwano, M. et al.; "Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane"; Japanese Journal of Applied Physics; vol. 28, No. 7, (Jul., 1989,) pp. L1310-L1313.
Taylor, R. C. et al.; "Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films"; J. Electrochem. Soc.; vol. 136, No. 8, (Aug. 1989), pp. 2382-2386.
Okuhara, T. et al.; "Preparation of SiO.sub.2 overlayers on Oxide Substrates by Chemical Vapor Deposition of Si(OC.sub.2 H.sub.5).sub.4 "; Applied Surface Science 29 (1987), pp. 223-241.
Chapple-Sokol, J. D. et al.; "A Kinetics Study of the Atmospheric Pressure CVD Reaction of Silane and Nitrous Oxide"; J. Electrochem. Soc., vol. 136, No. 10, (Oct. 1989), pp. 2993-3003.
Hochberg, A. K. et al.; "The Use of Liquid Sources in CVD Applications: Fire Safety Considerations and Delivery Methods"; Technical Article 15 of J. C. Schumacker, a Unit of Air Products and Chemicals, Inc. no date avail.
Crowell, J. E. et al.; "Model Studies of Dielectric Thin Film Growth: Chemical Vapor Deposition of SiO.sub.2 "; pp. 1864-1870 no date avail.
Pavelescu, C. et al.; "Correlations Between the Properties and the Deposition Kinetics of Low-Temperature Chemical Vapour Deposited SiO.sub.2 Films: The Effect of O.sub.2 /SiH.sub.4 Mole Ratio"; Journal of Materials Science Letters 9 (1990) no month avail. pp. 143-144.
Lucovsky, G. et al.; "Deposition of Silicon Oxide, Nitride and Oxynitride Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition"; Journal of Non-Crystalline Solids; 90 (1987) no month avail. pp. 259-266.
Orfescu, C. et al.; "An Etch Rate Study on Thermally Annealed SiO.sub.2 Films Deposited in a TESO-LPCVD System"; Journal of Materials Science 25 (1990) no month avail. pp. 1366-1368.
Maruyama, Toshiro et al.; "Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Silicon Tetraacetate"; Japanese Journal of Applied Physics; vol. 28, No. 12, (Dec. 1989), pp. L2253-L2254.
Ozturk, Mehmet C. et al.; "Low-Pressure Chemical Vapor Deposition of Polycrystalline Silicon and Silicon Dioxide by Rapid Thermal Processing", Mat. Res. Soc. Symp. Proc., vol. 146, (1989) no month avail. pp. 109-114.
Webb, Douglas A. et al.; "Silicon Dioxide Films Produced by PECVD of TEOS and TMCTS"; Proc. 2nd International ULSI Science and Technology Symposium ECS Proc. vol. 89(9)(1989) no month avail. pp. 571-578.
Hochberg, A. K. et al.; "The LPCVD of Silicon Oxide Films below 400.degree.C from Liquid Sources", J. Electrochem. Soc., vol. 136, No. 6, (Jun. 1989), pp. 1843-1844.
Hochberg, Dr. A. et al.; "User's Guide For: Glass Deposition with LTO-410.TM. Source Material" no date avail.
Desu, S. B.; "Decomposition Chemistry of Tetraethoxysilane"; Abstrate No. 1855RNP; presented at the Fall Meeting of Electrochemical Society, Honolulu, Hawaii, 18-23 (Oct., 1987).
Raju, Surya K. et al.; "Analytical Model for the Low Pressure Chemical Vapor Deposition of SiO.sub.2 from Tetraethoxysilane" no date avail.
J. C. Schumacher Co.,; Tetramethylcyclotetrasiloxane "Tomcats.TM."; Chemical & Physical Properties no date avail.
Hochberg, A. K. et al.; "The Deposition of Silicon Oxide Films at Low Temperatures from Liquid Sources" no date avail.
Roy A. Gordon: Patent and Patent Citations (Derwent World Patent Records) no date avail.

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