Compound with room temperature electrical resistivity comparable

Details Compound with room temperature electrical resistivity comparable Compound with room temperature electrical resistivity comparable

1993-02-23

1994-02-22

Roy, Upendra

Alloys or metallic compositions

Copper base

437196, C22C 900

Patent

active

052884562

ABSTRACT:
The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

REFERENCES:
patent: 1777174 (1930-09-01), Machin et al.
patent: 2058376 (1936-10-01), Critchett
patent: 3158504 (1964-11-01), Anderson
patent: 3198999 (1965-08-01), Baker et al.
patent: 3243324 (1966-03-01), Kodera et al.
patent: 3370978 (1968-02-01), Pollack et al.
patent: 3468659 (1969-09-01), Belasco et al.
patent: 3532562 (1970-10-01), Clawson et al.
patent: 3765956 (1973-10-01), Li
patent: 3968272 (1976-07-01), Anand
patent: 4188710 (1980-02-01), Davey et al.
patent: 4201601 (1980-05-01), D'Silva
patent: 4786469 (1988-11-01), Weber et al.
patent: 4853184 (1989-08-01), Naya et al.
patent: 4883772 (1989-11-01), Cleeves et al.
patent: 5001536 (1991-03-01), Fukuzawa et al.
patent: 5066612 (1991-11-01), Ohba et al.
patent: 5112699 (1992-05-01), Chang
patent: 5130274 (1992-07-01), Harper et al.
Massalski, T. B. Acta Metallurgica, vol. 6, Apr. 1958, pp. 243-253.
Kola et al., "Transition metal silicide precipitation in silicon induced by rapid thermal processing and free-surface gettering", Appl. Phys. Lett. 55, pp. 2108-2110 (1989).
Thompson et al., "Low temperature gettering of Cu, Ag and Au across a wafer of Si by Al", Appl Phys. Lett. 5, pp. 440-442 (1982).
Krusin-Elbaum et al., "Unusually low resistivity of copper germanide thin films formed at low temperatures", Appl. Phys. Lett. 58, pp. 1341-1343 (1991).
Chang, "Thermal stability of the Cu/PtSi metallurgy", J. Appl. Phys. 66, pp. 2989-2992 (1989).
Chang, "Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures", J. Appl. Phys. 67, pp. 566-568 (1990).
Cros, et al., "Formation, oxidation, electronic, and electrical properties of copper silicides", J. Appl. Phys. 67, pp. 3328-3336 (1990).

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