Compound transistor circuitry

Details Compound transistor circuitry Compound transistor circuitry

1975-06-10

1976-10-12

Heyman, John S.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307202R, 307237, 330 35, 330207P, H03F 316, H02H 900

Patent

active

039860604

ABSTRACT:
A compound transistor circuitry comprises a non-saturation type first field effect transistor and a saturation type second field effect transistor which is direct-coupled to the source circuit of said first FET. The internal dynamic resistance of the second FET functions as a negative feed-back element for the first FET. This internal dynamic resistance will greatly increase when the drain current of the second FET saturates. As a result, the compound transistor circuitry presents an output characteristic closely resembling that of the first FET within the operative range where the second FET does not saturate, whereas the circuitry presents an output characteristic that the current saturates at a level substantially equal to the saturating current of the second FET within the operative range where the second FET saturates.

REFERENCES:
patent: 3407360 (1968-10-01), Buhr
"Cascode Field Effect Transistor Applications"; Amelco Semiconductor; Division of Teledyne, Inc., Tech. Notes No. 5; pp. 1-14, 10/1963.
Ott, "Biasing the Junction FET", EEE; Jan. 1970; pp. 52-57.
Sherwin et al., EEE (pub.); Oct. 1967; pp.82-85.

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