Compound tertiarybutylbis-(dimethylamino)phosphine and a process

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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42725539, 4272556, 568 8, C23C 1600

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active

060601191

ABSTRACT:
A new compound tertiarybutylbis-(dimethylamino)phosphine and a process for preparing the compound, which has the formula ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P. The process has the steps of: (1) reacting phosphorus trihalide, PX.sub.3, with tertiarybutyl Grignard reagent, ((CH.sub.3).sub.3 C)MgX, where X is a halide; (2) treating the resulting product with lithium dimethylamide, LiN(CH.sub.3).sub.2 to form a reaction mixture; and (3) recovering ((CH.sub.3).sub.3 C) ((CH.sub.3).sub.2 N).sub.2 P from the reaction mixture.

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Hill., C.W., "A comparison of the reactions of phosphorus precursor on deposited GaP and InP films." Journal of Crystal Growth 181, (1997), pp. 321-325.
Ryu, H.H., "Chemical beam epitaxy of InP without precracking using tertiarybutylbis (dimethylamino) phosphine." Journal of Crystal Growth 172 (1997) pp. 1-4.

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