Compound semicondutor light-emitting device

Details Compound semicondutor light-emitting device Compound semicondutor light-emitting device

1994-03-15

1995-07-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 77, 372 44, H01S 319

Patent

active

054328080

ABSTRACT:
A compound semiconductor light-emitting device includes a cubic SiC substrate, and an Ga.sub.x Al.sub.y In.sub.1-x-y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) layer formed on the (111) surface of the cubic-crystal SiC substrate. The surface of the Ga.sub.x Al.sub.y In.sub.1-x-y N layer, which opposes the substrate, is an N surface, and the light-emitting device has a pn junction.

REFERENCES:
patent: 5187547 (1993-02-01), Niina et al.
patent: 5243204 (1993-09-01), Suzuki et al.
patent: 5323022 (1994-06-01), Glass et al.
Extended Abstracts (The 40th Spring Meeting, 1993): The Japan Society of Applied Physics and Related Societies 31p-ZQ-17; T. Okahisa, et al., "Growth of GaN films on GaAs, 3cSiC . . . " (no month).
Journal of Crystal Growth, vol. 127, pp. 136-142, M. J. Paisley, et al., "Molecular Beam Epitaxy of Nitride Thin Films 1993 (no month)".
Applied Surface Science, vol. 41/42, pp. 504-508, 1989, T. Sasaki, et al., "MOVPE-Grown GaN on Polar Planes . . . " (no month).

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