Compound semiconductor wafer with defects propagating prevention

Details Compound semiconductor wafer with defects propagating prevention Compound semiconductor wafer with defects propagating prevention

1992-08-19

1993-05-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

257913, 257183, 257620, 257622, 437946, 437126, 437226, H01L 2724

Patent

active

052123944

ABSTRACT:
A compound semiconductor epitaxial wafer has a heteroepitaxial crystal layer grown on a compound semiconductor crystal substrate which has a substantially circular configuration and is free of dislocation defects at least in a central area surrounded by a cut-off that prevents defects from propagating radially inwardly into said central area.

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Schwuttke et al., "Etching of Vertical Walled Patterns in (100) Silicon," IBM Technical Disclosure Bulletin, vol. 14, No. 11, Apr. 1972, p. 3405.
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Woodall et al., "Preparing Uniformly Doped and Dislocation Free GaAs Crystals", IBM Technical Disclosure Bulletin, vol. 12, No. 9, Feb. 1970, pp. 1482-1483.
Tohno et al., "X-Ray Topographic Observation of Dislocation Generation and Propagation in InP Single Crystal Grown by the Liquid-Encapsulated Czochralski Technique," J. Appl. Phys. 54(2), Feb. 1983, pp. 666-672.
Tada et al., "Growth of Low-Dislocation Density InP by the Modified CZ Method in the Atmosphere of Phosphorus Vapour Pressure", Inst. Phys. Conf. Ser. No. 91; Chapter 5, Paper Presented at Int. Symp. GaAs and Related Compounds, Heraklion, Greece, 1987, pp. 439-442.
Article: "The Growth and Characterization of Large Size, High Quality, InP Single Crystals", by Monberg et al., AT&T Bell Lab., Murray Hill, N.J.; vol. 135, No. 2; J. Electrochem. Soc.: Feb. 1988, pp. 500-503.

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