Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-12-11
2007-12-11
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S613000, C257SE31022, C257SE31059, C438S057000
Reexamination Certificate
active
10514973
ABSTRACT:
A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-xgraded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsyP1-ybuffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.
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Iwasaki Takashi
Kimura Hiroya
Ohki Kenji
Sawada Shigeru
Fasse W. F.
Fasse W. G.
Sefer A.
Sumitomo Electric Industries Ltd.
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