Coating apparatus – Gas or vapor deposition – With treating means
Patent
1993-02-03
1994-12-06
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118715, C23C 1600
Patent
active
053707389
ABSTRACT:
A compound semiconductor vapor phase epitaxial device comprises a cylindrical reactor vessel, a plurality of flow channels disposed in the reactor vessel, a crystal substrate disposed in one of the flow channels, a plurality of gas supply pipes for respectively supplying gas containing element of compound to be grown on the crystal substrate and at least one slit or linearly arranged fine holes communicating adjacent two flow channels so as to extend in a direction normal to a direction of the gas flow to form a laminate layer flow consisting of two or more than two gases at an upstream portion of location of the crystal substrate.
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patent: 5070814 (1991-12-01), Whiffin
patent: 5183510 (1993-02-01), Kimura
patent: 5254210 (1993-10-01), Jones
Akasaki Isamu
Amano Hiroshi
Hiramatsu Kazumasa
Watanabe Atsushi
Akasaki Isamu
Amano Hiroshi
Bueker Richard
Pioneer Electronic Corporation
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