Telecommunications – Transmitter and receiver at same station – With transmitter-receiver switching or interaction prevention
Reexamination Certificate
2005-03-29
2005-03-29
Chin, Vivian (Department: 2682)
Telecommunications
Transmitter and receiver at same station
With transmitter-receiver switching or interaction prevention
C333S100000
Reexamination Certificate
active
06873828
ABSTRACT:
A compound semiconductor switching device is based on a designing guideline that isolation should be assured by reducing the gate width of switching FET, thereby reducing the capacitance of the FET. Proper isolation between the two signal passes IS obtained with a FET gate width of about 700 μm or smaller at a signal frequency of about 2.4 GHz or higher, without employing a shunt FET.
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Office Action from Taiwan Patent office dated Apr. 24, 2002.
Asano Tetsuro
Higashino Takayoshi
Hirata Koichi
Chin Vivian
Morrison & Foerster / LLP
Phu Sanh
Sanyo Electric Co,. Ltd.
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