Compound semiconductor switching circuit device

Details Compound semiconductor switching circuit device Compound semiconductor switching circuit device

2005-12-22

2008-03-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S203000, C257S206000, C257S207000, C257SE29006, C327S432000

Reexamination Certificate

active

07339210

ABSTRACT:
High resistance elements of 5 KΩ or more are connected near first and second control terminals between the first and second control terminals and respective crossing portion of first and second connectings. Even when a high frequency analog signal transmitted in a pad wire leaks to the first and second connectings, the high frequency analog signal is attenuated by the high resistance elements. Accordingly, the high frequency analog signal is not substantially transmitted to control terminal pads. It is therefore possible to suppress an increase in insertion loss.

REFERENCES:
patent: A-2002-368194 (2002-12-01), None
patent: 2002-93613 (2002-12-01), None

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