Compound semiconductor surface termination

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357 16, 357 232, 357 4, 428620, H01L 2934

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048110779

ABSTRACT:
A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.

REFERENCES:
patent: 4354198 (1982-10-01), Hodgson et al.
Applied Physics Letters, Jul. 1987, "Nearly Ideal Electronic Properties of Sulfide Coated GaAs Surfaces" by Yablonovitch et al.
U.S. Ser. No. 06/874,738, filed 06/16/86, Kirchner et al.
Applied Physics Letters, Jul. 1987, "Dramatic Enhancement in the Gain of a GaAs/AlGaAs Heterostructure Bipolar Transistor by Surface Chemical Passivation" by Sandroff et al.
J. Vac. Sci. Technol., 17(5), Sep./Oct. 1980, p. 1134, "Effects of H.sub.2 S Adsorption on Surface Properties of GaAs [100] Grown in Situ by MBE" by Massies et al.
J. Vac. Sci. Technol. B3 (4), Jul./Aug. 1985, p. 1197, "Influence of S and Se on the Schottky-Barrier Height and Interface Chemistry of Au Contacts to GaAs" by J. R. Waldrop.

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