Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-01-04
2011-01-04
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S053000, C257S577000, C257S607000, C257S632000, C257SE21019, C257SE21021, C257SE21226, C257SE21227, C257SE21460, C361S516000, C361S522000, C361S526000, C438S104000, C438S478000, C438S680000, C438S798000
Reexamination Certificate
active
07863609
ABSTRACT:
A compound semiconductor substrate10according to the present invention is comprised of a Group III nitride and has a surface layer12containing a chloride of not less than 200×1010atoms/cm2and not more than 12000×1010atoms/cm2in terms of Cl and an oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, at a surface. The inventors conducted elaborate research and newly discovered that when the surface layer12at the surface of the compound semiconductor substrate10contained the chloride of not less than 200×1010atoms/cm2and not more than 12000×1010atoms/cm2in terms of Cl and the oxide of not less than 3.0 at % and not more than 15.0 at % in terms of O, Si was reduced at an interface between the compound semiconductor substrate10and an epitaxial layer14formed thereon and, as a result, the electric resistance at the interface was reduced.
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Ishibashi Keiji
Nakanishi Fumitake
Drinker Biddle & Reath LLP
Nguyen Dao H
Sumitomo Electric Industries Ltd.
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