Compound semiconductor substrate having a hetero-junction and a

Details Compound semiconductor substrate having a hetero-junction and a Compound semiconductor substrate having a hetero-junction and a

1993-09-14

1995-09-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257190, 257201, 257615, H01L 29205, H01L

Patent

active

054499283

ABSTRACT:
A pseudomorphic HEMT of a structure which prevents the distribution of 2DEG in the channel layer from being concentrated near the hetero-interface relative to a doping layer and which, at the same time, enables the thickness of the channel layer to which distortion is imparted to be decreased. In an n-InAlAs/InGaAs pseudomorphic structure grown on an InP substrate 1, an InGaAs spacer layer 4 having an In composition ratio smaller than that of an InGaAs channel layer 3 is inserted in an InAlAs/InGaAs hetero-interface. The InGaAs channel layer 3 has an In composition ratio of 0.80 to exhibit a high mobility. Another InAlAs buffer layer 2, spacer layer 5 and doping layer 6 have an In composition ratio of 0.52 which is in lattice-match with the substrate, and InGaAs spacer layer 4 and cap layer 7 have an In composition ratio of 0.53 which is in lattice-match with the substrate. This constitution makes it possible to control the two-dimensional electron gas and to further increase the mobility.

REFERENCES:
Lai et al, "Characteristics of 0.8-and 0.2-mm Gate length In.sub.x Ga.sub.1-x As/In 0.52 Al.sub.0.48 As/InP (0.53.ltoreq..infin..ltoreq.0.70 Modulation-Doped Field-Effect Transistors at Cryogenic Temperatures", IEEE Translations on Electron Devices, vol. 39, No. 10, Oct. 1992.
Ngnyer et al, "GJO.ANG. Self-Aligned-Gate Psenchmorphic Al.sub.0.48 In.sub.0.52 As/Ga.sub.0.20 In.sub.0.80 As High Electronic Mobility Transistors", IEEE Electron Device Letters, vol. 13, No. 3, Mar. 1992.
Ng et al, "Design and Experimental Characteristics of Strained In.sub.0.52 Al.sub.0.48 As/In.sub.x Gn.sub.1-x As (.infin.>0.53) HEMT's", IEEE Transactions on Electron Devices, vol. 36, No. 10 Oct. 1989.
Chen et al, 37 Depletion Mode Modulation Doped Al.sub.0.48 In .sub.0.52 As-Ga.sub.0.47 In.sub.0.53 a As Heterojunction Field Effect Transistors, IEEE Electron Device Letters, vol. EDL-3, No. 6, Jun. 1982.
Extended Abstract (The 53rd Autumn Meeting) Japan Society of Applied Physics, Matsugatani et al Abstract 17a-7l-8 "Effect of an inserted In.sub.x GA.sub.1-x As layer in In.sub.0.52 Al.sub.0.48 As/In.sub.0.8 Ga.sub.0.2 As Hetero Interface" Sep. 16, 1992.
Kohji Matsumura et al, ED90-115, from Japanese Association of Electronic Information Communication, "A Newly Designed HEMT Wafer With One In As Monolayer In The Channel", pp. 69-74.
Tatsushi Akazaki et al, "Improved INA1AS/InGaAs HEMT Charactristics By Inserting An InAS Layer Into The INGaAs Channel", IEEE Electron Device Letters, vol. 13, No. 6, Jun. 1992, pp. 325-327.
T. Schweizer et al, "Highly Anisotropic Electron Mobilities of GaAs/In 0.2 Ga 0.8 As/Al 0.3 Ga 0.7 As Inverted High Electron Mobility Transistor Structures", Appl. Phys. Letts 59 (21) Nov. 18, 1991 (pp. 2736-2738).
Jean C. Harmand et al, "Lattice-Mismatched Growth And Transport Properties of InA1As/InGaAs Heterostructures on GaAs Substrates", Japanese Journal of Applied Physics, vol. 28, No. 7, Jul. 1989, pp. 1101-1103.
S. Sasa et al, "Electronic Properties Of Two-Dimensional Electron Gas In Psudomorphic et al", Journal of Crystal Growth 95 (1989) pp. 189-192.
S. R. Bahl et al, "Orientation Depencence of Mismatched, etc.", Journal of Crystal Growth III 1991, pp. 479-483.

Affiliated with

Also associated with

Rating

Compound semiconductor substrate having a hetero-junction and a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor substrate having a hetero-junction and a , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor substrate having a hetero-junction and a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-407308