Compound semiconductor substrate for a field effect transistor

Details Compound semiconductor substrate for a field effect transistor Compound semiconductor substrate for a field effect transistor

2011-01-11

2011-01-11

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S280000, C257SE29246

Reexamination Certificate

active

07868356

ABSTRACT:
A III-V field effect transistor comprisinga semiconductor channel layer having an electrically conducting channel;an ohmic contact layer on the semiconductor channel layer, the ohmic contact layer having a recess structure disposed therethrough to the semiconductor channel layer;the bottom of the ohmic contact layer comprising an etch stop layer comprising Aluminium and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.

REFERENCES:
patent: 7282425 (2007-10-01), Koester et al.
patent: 7504311 (2009-03-01), Koester et al.

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