Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-05-03
2005-05-03
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S183000, C257S189000
Reexamination Certificate
active
06888175
ABSTRACT:
A compound tetrahedrally coordinated semiconductor structure, whose chemical formula is generally of the form IInIIImIVlVpVIq, where n, m, l, p, q represent the relative abundance of each element associated with a particular group of the periodic table. The flexibility of the chemical formula may be used to adjust the lattice constant and polarity to eliminate mismatches from substrates. Other properties, such as those of band gaps, can also be tuned. The design is amenable to layer-by-layer heteroepitaxial growth. In exemplary embodiments, a structure is provided that matches lattice constant and polarity with a Si(100) surface, while having a direct band gap of 1.59 μm.
REFERENCES:
patent: 4107564 (1978-08-01), Klimin et al.
patent: 4661961 (1987-04-01), Nelson et al.
patent: 4833101 (1989-05-01), Fujii
patent: 4897699 (1990-01-01), Razeghi et al.
patent: 5060028 (1991-10-01), Kuo et al.
patent: 5075743 (1991-12-01), Behfar-Rad
patent: 5204284 (1993-04-01), Kuo et al.
patent: 5255279 (1993-10-01), Takahashi et al.
patent: 5376580 (1994-12-01), Kish et al.
patent: 5523592 (1996-06-01), Nakagawa et al.
patent: 5548128 (1996-08-01), Soref et al.
patent: 5583351 (1996-12-01), Brown et al.
patent: 5625202 (1997-04-01), Chai
“Some Candidate Materials For Lattice-Matched Liquid-Phase Epitaxial Growth on Silicon” by Richard Corkish; vol. 31, No. 6; Dec. 1, 1991; pp. 537-548.
“The preparation and growth of polycrystalline layers of ZnSiP2 in an open flow system” by B.J. Curtis et al.; Materials Research Bulletin; vol. 5, No. 2; Feb., 1970; pp. 69-72.
“Vacuum Growht of Thin Films of ZnSnP2” by P.K. Ajmera et al.; Solar Cells; vol. 21, No. 1-4; Jun., 1987; pp. 291-299.
“Organometallic Chemical Vapor Deposition and Characterization of ZnGe1-xSi2P2-Ge Alloys On GaP Substrates” by G.C. Xing et al.; Journal of Crystal Grown; vol. 113, No. 1 / 2 ; Aug. 1, 1991; pp. 113-119.
“Deliberately Designed Materials for Optoelectronics Applications” by Tairan Wong et al.; Physical Review Letters; vol. 83, No. 16; Apr. 19, 1999; pp. 3304-3307.
XP 000259176 “Organometallic Chemical Vapor Deposition and Characterization of ZnGe1-xSixP2-Ge Alloys on GaP Substrates ” by Xing et al.; Journal of Crystal Growth 113 (1991); pp.: 113-119.
XP-002114638 “Deliberately Designed Materials for Optoelectronics Applications” by Wang et al.; Department of Physics, Massachusetts Institue of Technology; vol. 82, No. 16; pp.; 3304-3307.
XP-002114637 “Vacuum Growth of Thin Films of ZsSnP2” by Ajmera et al., Electrical and Computer Engineering, Louisiana State University, Baton Rouge, LA; pp.: 291-299.
XP 000237360 :Some Candidate Materials For Lattice-Matched Liquid-Phase Epitaxial Growth On Silicon by Richard Corkish; Solar Photovaltaic Laboratory, Centre For Photovaltaic Devices and Systems, University of New South Wales, Kensington, N.S.W. 2033 Australia; pp. 537-547.
Xp 002114636 “The Preparation and Growth of Polycrystalline Layers of ZnSiP2In An Open Flow System” by Curtis et al., Mat. Res. Bull. vol. 5, pp.: 69-72, 1970.
“Deliberately Designed Materials for Optoelectronics Applications,” Wang et al.Physical Review Letters. Apr. 19, 1999. vol. 82, No. 16.
“Semiconductor Alloys for Monolithic Integration with Si Microelectronics,” Moll et al.Materials Science and Engineering. Jan. 6, 1999.
“Computational Design of compounds for monolithic integration in optoelectronics,” Wang et al.Physical Review B. vol. 63.
“The Third Branch of Science Debuts,” R.P.Science. Apr. 3, 192. vol. 256.
“Science in the National Interest, ” Pres. William J. Clinton & V. Pres. Albert Gore, Jr.Executive Office of the President & Office of Science Technology Policy. Aug. 1994.
American Association For The Advancement of Science; Computing In Science; Apr. 3, 1992; vol. 256; pp.: 45-62; The Third Branch of Science Debuts.
“Computational design of noval compounds for monolithic integration in optoelectronics” by Tairan Wang et al; pp.: 1-12.
“Science in the National Interest” by President William J. Clinton and Vice President Albert Gore, Jr.; Aug. 1994; Executive Office of the President Office of Science and Technology Policy; pp. 1-31.
Cho Kyeongjae
Joannopoulos John D.
Moll Nikolaj
Wang Tairan
Crane Sara
Gauthier & Connors LLP
LandOfFree
Compound semiconductor structure with lattice and polarity... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Compound semiconductor structure with lattice and polarity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor structure with lattice and polarity... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3449536