Compound semiconductor structure including p-type and n-type reg

Details Compound semiconductor structure including p-type and n-type reg Compound semiconductor structure including p-type and n-type reg

1992-08-13

1994-05-24

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

257609, 257657, H01L 3300

Patent

active

053151330

ABSTRACT:
While depositing a III-V compound semiconductor layer from a vapor, carbon is added to group III and V elements to produce a p type conductivity region in the depositing semiconductor layer. Then, a small amount of n type dopant is added to the group III and V elements together with the carbon to produce an n type conductivity region in the depositing semiconductor layer. A sharp and precisely controlled doping profile is produced in the vicinity of a p-n junction, resulting in a semiconductor device having good initial performance and high reliability.

REFERENCES:
patent: 3617820 (1971-11-01), Herzog
patent: 4845049 (1989-07-01), Sunakawa
patent: 5168077 (1992-12-01), Ashizawa et al.
patent: 5173445 (1992-12-01), Ando et al.
Guido et al, "Carbon-doped Al.sub.x Ga.sub.1-x As-GaAs quantum well lasers", Applied Physics Letters 52, Feb. 15, 1988, pp. 522-524.
Cunningham et al, "Carbon tetrachloride doped Al.sub.x Ga.sub.1-x As grown by metalorganic chemical vapor deposition", Applied Physics Letters 56, Feb. 26, 1990, pp. 36-38.
Cunningham et al, "Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition tetrachloride as a dopant source", Applied Physics Letters 56, Jan. 22, 1990, pp. 361-363.
Tischler et al, "Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy", Journal of Crystal Growth 107 Jan. 1991, pp. 268-273.
"An 825nm Inverted-Inner-Strop Laser Diode With A P-GaAs Buffer Layer Grown By MOCVD", Mitsubishi Denki Giho, vol. 62, No. 11, 1981, pp. 28-31.
Nakatsuka et al, "A New Self-Aligned Structure For (GaAl) As High Power Lasers With Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD", Japanese Journal of Applied Physics, vol. 25, No. 6, 1986, pp. L498-L500.

Affiliated with

Also associated with

Rating

Compound semiconductor structure including p-type and n-type reg does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor structure including p-type and n-type reg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor structure including p-type and n-type reg will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1974645