Compound semiconductor structure including layer limiting silico

Details Compound semiconductor structure including layer limiting silico Compound semiconductor structure including layer limiting silico

1991-03-04

1992-06-02

James, Andrew J.

357 16, 357 63, H01L 3300, H01L 29161

Patent

active

051191504

ABSTRACT:
A semiconductor structure includes a compound semiconductor substrate, a compound semiconductor diffusion limiting layer containing aluminum, disposed on the substrate, and having a larger aluminum content than the substrate, a compound semiconductor layer disposed on the diffusion limiting layer, a silicon film disposed on the semiconductor layer, and a diffusion region into which silicon has diffused from the silicon film to reach the interface between the diffusion limiting layer and the substrate. The diffusion limiting layer may be employed in a semiconductor laser to prevent silicon from diffusing beyond desired regions and to form a light-confining structure.

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patent: 4727556 (1988-02-01), Burnham et al.
patent: 4731789 (1988-03-01), Thornton
patent: 4830983 (1989-05-01), Thornton
patent: 4847217 (1989-07-01), Omura et al.
Omura, Wu et al., "Silicon Diffusion . . . Silicon Film", Applied Physics Letters, vol. 50, No. 5, 1987, pp. 265-266.
Omura, Vawter et al., "Selective Double Diffision . . . Masks", . . . on Solid State Devices and Materials, Tokyo, 1986, pp. 41-44.
Greiner et al., "Diffusion of Silicon . . . Model", Applied Physics Letters, vol. 44, No. 8, 1984, pp. 750-752.

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