Compound semiconductor structure and process for making same

Details Compound semiconductor structure and process for making same Compound semiconductor structure and process for making same

1988-05-02

1990-04-03

Edlow, Martin H.

357 16, 357 22, M01L 2712

Patent

active

049144880

ABSTRACT:
A compound semiconductor structure in the form of a superlattice film with effectively graded average composition, comprising an alternating lamination of two kinds of layers of different composition to form pairs of layers, the ratio of the thickness of one layer to the thickness of the other in said pairs of layers being gradually varied in the direction of thickness throughout successive pairs, thereby the average composition being effectively graded throughout the pairs. In a hetero-junction field effect transistor, the layer of effectively graded composition is used between a semiconductor layer making low resistance contact with a current-supplying electrode and a semiconductor layer where a two dimensional channel is to be formed. In case of AlGaAs/GaAs system, the Al composition is varied. When the superlattice film is heat-treated, Al in the AlGaAs layer diffuses into the GaAs layer, yielding a film with actually smoothly graded Al mole fraction.

REFERENCES:
patent: 4794611 (1988-12-01), Hara
patent: 4819036 (1989-04-01), Kuroda

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