Compound semiconductor single-crystalline substrate for liquid p

Details Compound semiconductor single-crystalline substrate for liquid p Compound semiconductor single-crystalline substrate for liquid p

1995-03-03

1996-05-07

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

257 95, 257622, H01L 2906

Patent

active

055149030

ABSTRACT:
The disclosed compound semiconductor single-crystalline substrate for liquid phase epitaxial growth has a relatively low cost and excellent practicality. This compound semiconductor single-crystalline substrate has a surface roughness of at least 1 .mu.m and not more than 10 .mu.m as measured over a line of 1 mm length. This substrate is employed as a substrate for an epitaxial wafer for an infrared- or visible light-emitting diode. Due to its particular roughness, the substrate can be prevented from slipping or falling while it is transported during processing. Furthermore, no lapping and polishing are required for manufacturing the substrate. Thus, the substrate for liquid phase epitaxial growth can be provided at a relatively low cost.

REFERENCES:
patent: 3877052 (1975-04-01), Dixon et al.
patent: 5040044 (1991-08-01), Noguchi et al.
patent: 5260588 (1993-11-01), Ohta et al.

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