Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Avalanche diode
Reexamination Certificate
2005-01-04
2005-01-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Avalanche diode
C257S199000, C257S198000
Reexamination Certificate
active
06838710
ABSTRACT:
The invention relates to the protection of devices in a monolithic chip fabricated from an epitaxial wafer, such as a wafer for a Group III-V compound semiconductor or a wafer for a Group IV compound semiconductor. Devices fabricated from Group III-V compound semiconductors offer higher speed and better isolation than comparable devices from silicon semiconductors. Semiconductor devices can be permanently damaged when exposed to an undesired voltage transient such as electrostatic discharge (ESD). However, conventional techniques developed for silicon devices are not compatible with processing techniques for Group III-V compound semiconductors, such as gallium arsenide (GaAs). Embodiments of the invention advantageously include transient voltage protection circuits that are relatively efficiently and reliably manufactured to protect sensitive devices from undesired voltage transients. A protection circuit can be monolithically integrated with the protected circuit or can be packaged in a separate integrated circuit.
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Knobbe Martens & Olson Bear LLP.
Microsemi Corporation
Nguyen Thinh T
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