Compound semiconductor pellet, and method for dicing compound se

Details Compound semiconductor pellet, and method for dicing compound se Compound semiconductor pellet, and method for dicing compound se

1991-10-07

1993-01-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG28, 257620, 257627, H01L 21302

Patent

active

051822334

ABSTRACT:
A compound semiconductor pellet has a zincblende crystal structure and is formed of a III-V compound semiconductor, such as GaAs. The major surface of the pellet and side surfaces thereof are both {100} planes. To obtain this type of pellet, [010] and [001] directions are selected as dicing directions. In the case of a crystal having a zincblende crystal structure, a direction which forms 45.degree. with reference to a cleavage plane of the crystal is selected as a dicing direction.

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Won-Tien Tsang et al., "Profile and groove-depth control in GaAs diffraction gratings fabricated by preferential chemical etching in H.sub.2 SO.sub.u -H.sub.2 O.sub.2 -H.sub.2 O system", Applied Physic Letter, vol. 28 (Jan. 1976) pp. 44-46.
R. C. Ghee et al., "Polycrystallinity of (100) oneated Crystals", IBM Technical Disclosure Bulletin, vol. 14 (Jun. 1971) p. 186.

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