Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2005-04-05
2005-04-05
Baumeister, Bradley (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S197000
Reexamination Certificate
active
06876013
ABSTRACT:
A compound semiconductor multilayer structure comprising a carbon-containing p-type gallium arsenide (GaAs)-system crystal layer, wherein the carbon-containing p-type GaAs-system crystal layer exhibits a predominant photoluminescence peak measured at 20K within a range of 828 nm to 845 nm, and wherein the ratio of hydrogen atom concentration to carbon atom concentration in the carbon-containing p-type GaAs crystal layer is 1/5 or less. Furthermore, in a photoluminescence measurement at 10K, the carbon-containing GaAs-system p-type crystal layer exhibits a first predominant photoluminescence peak and a second predominant photoluminescence peak due to band gap transitions of GaAs and wherein the second predominant luminescence wavelength has a longer wavelength than the first predominant photoluminescence wavelength and the intensity ratio of the second luminescence peak to the first luminescence peak is within a range from 0.5 to 3.
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Okano Taichi
Udagawa Takashi
Baumeister Bradley
Showa Denko K.K.
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