Compound semiconductor, method for producing the same,...

Details Compound semiconductor, method for producing the same,... Compound semiconductor, method for producing the same,...

2006-01-31

2006-01-31

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S047000

Reexamination Certificate

active

06991955

ABSTRACT:
An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.

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patent: 6-13334 (1994-01-01), None
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