Compound semiconductor, method for producing the same,...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

Reexamination Certificate

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C438S047000

Reexamination Certificate

active

06991955

ABSTRACT:
An inventive method includes the steps of: growing a first p-type semiconductor layer of a compound semiconductor containing phosphorus on a substrate; and growing a second p-type semiconductor layer of a compound semiconductor containing arsenic on the first p-type semiconductor layer. While the first p-type semiconductor layer is grown, magnesium is added to the first semiconductor layer. While the second p-type semiconductor layer is grown, a p-type impurity other than magnesium is added to the second semiconductor layer.

REFERENCES:
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patent: 5381756 (1995-01-01), Kondo et al.
patent: 5621748 (1997-04-01), Kondo et al.
patent: 6440764 (2002-08-01), Focht et al.
patent: 6-13334 (1994-01-01), None
patent: 10-135567 (1998-05-01), None

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