Compound semiconductor, method for manufacturing the same,...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

Reexamination Certificate

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C438S047000

Reexamination Certificate

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10959077

ABSTRACT:
A first semiconductor layer consisting of AlGaInP is formed on a substrate consisting of GaAs by crystal growth while adding magnesium (Mg) that is a p-type dopant to the first semiconductor layer. A second semiconductor layer consisting of GaAs is then grown on the first semiconductor layer without adding any magnesium to the second semiconductor layer. Thus, the second semiconductor layer can prevent unintended doping (memory effect) produced by magnesium.

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Ohba, Y., et al., “A Study of p-Type Doping for AlGalnP Grown by Low-Pressure MOCVD.” Jpurnal of Crystal Growth, 93, Nov. 1988, XP-002328550, pp. 613-617.
Murata, H., et al. “Low Threshold Current Density of 620nm Band MQW-SCH AlGalnP Semiconductor Lasers with Mg Doped AllnP Cladding Layer.” Electronics Letters, Aug. 15, 1991, vol. 27, No. 17, XP000259844, pp. 1569-1571.
Roentgen, P., et al. “MOVPE of AlGalnP/GalnP heterostructures for visible lasers.” Journal of Crystal Growth, vol. 1107, No. 1/4, Jan. 1991, XP000246679, pp. 724-730.
European Search Report issued in corresponding European Patent Application No. 04 024 079.8, dated May 18, 2007.

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