Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-09-11
2007-09-11
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S047000
Reexamination Certificate
active
10959077
ABSTRACT:
A first semiconductor layer consisting of AlGaInP is formed on a substrate consisting of GaAs by crystal growth while adding magnesium (Mg) that is a p-type dopant to the first semiconductor layer. A second semiconductor layer consisting of GaAs is then grown on the first semiconductor layer without adding any magnesium to the second semiconductor layer. Thus, the second semiconductor layer can prevent unintended doping (memory effect) produced by magnesium.
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European Search Report issued in corresponding European Patent Application No. 04 024 079.8, dated May 18, 2007.
Inoue Ken-ichi
Onishi Toshikazu
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Picardat Kevin M.
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