Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-07-05
2010-11-30
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S096000, C257SE31105, C257SE25032
Reexamination Certificate
active
07842966
ABSTRACT:
A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135)of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020cm−3or less.
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Takeuchi Ryouichi
Watanabe Takashi
Showa Denko K.K.
Sughrue & Mion, PLLC
Toledo Fernando L
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