Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-03-14
2010-06-08
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257SE33049
Reexamination Certificate
active
07732830
ABSTRACT:
A compound semiconductor light-emitting diode comprising a light-emitting layer composed of a Group III-V compound semiconductor, and a current diffusion layer provided on the light-emitting layer and composed of a Group III-V compound semiconductor, characterized in that the current diffusion layer is composed of a conductive boron-phosphide-based semiconductor and has a bandgap at room temperature wider than that of the light-emitting layer.
REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 6346719 (2002-02-01), Udagawa et al.
patent: 6512248 (2003-01-01), Takeuchi et al.
patent: 6531716 (2003-03-01), Udagawa
patent: 6677615 (2004-01-01), Takeuchi et al.
patent: 2001/0036678 (2001-11-01), Udagawa
patent: 2002/0000563 (2002-01-01), Udagawa
patent: 2003/0001162 (2003-01-01), Udagawa
patent: 2003/0027099 (2003-02-01), Udagawa
patent: 2003/0052323 (2003-03-01), Takeuchi et al.
patent: 2003/0173573 (2003-09-01), Udagawa
patent: 2003/0218180 (2003-11-01), Fujiwara
patent: 2003/0234400 (2003-12-01), Udagawa
patent: 2004/0026703 (2004-02-01), Adomi et al.
patent: 2004/0104396 (2004-06-01), Nakatsu et al.
patent: 11-4020 (1999-01-01), None
patent: 11-186601 (1999-07-01), None
patent: 2001-144330 (2001-05-01), None
patent: 2002-368260 (2002-12-01), None
patent: 2003-309284 (2003-10-01), None
patent: 2004-47760 (2004-02-01), None
Y. Hosokawa, et al, “High-Power Ohmic-Electrodes Dispersive AlGaInP Double-Hetero Structure Yellowish-Green Light-Emitting Diodes”, Journal of Crystal Growth, vol. 221, 2000, pp. 652-656.
Y. Kumasiro, et al, “Preparation and Electrical Properties of Boron and Boron Phosphide Films Obtained By Gas Source Molecular Beam Deposition”, Journal of Solid State Chemistry, vol. 133, 1997, pp. 269-272.
Takeuchi Ryouichi
Udagawa Takashi
Belousov Alexander
Showa Denko K.K.
Smith Bradley K
Sughrue & Mion, PLLC
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