Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-09-26
2010-06-08
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S094000, C257SE33023, C257SE33027
Reexamination Certificate
active
07732831
ABSTRACT:
A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
REFERENCES:
patent: 3022452 (1962-02-01), Forrest et al.
patent: 3054936 (1962-09-01), Forrest et al.
patent: 3071715 (1963-01-01), Dale
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5403916 (1995-04-01), Watanabe et al.
patent: 6462358 (2002-10-01), Lin et al.
patent: 6607931 (2003-08-01), Streubel
patent: 7135713 (2006-11-01), Chen
patent: 2003/0047737 (2003-03-01), Lin et al.
patent: 2003/0141509 (2003-07-01), Udagawa
patent: 2003/0160253 (2003-08-01), Udagawa
patent: 2003/0173573 (2003-09-01), Udagawa
patent: 2004/0169184 (2004-09-01), Udagawa et al.
patent: 2005/0087513 (2005-04-01), Liao et al.
patent: 2005/0121693 (2005-06-01), Udagawa et al.
patent: 2006/0094140 (2006-05-01), Inoguchi et al.
patent: 2008/0268562 (2008-10-01), Takeuchi
patent: 1162486 (1899-12-01), None
patent: 10204386 (2003-04-01), None
patent: 8-130326 (1996-05-01), None
patent: 2588849 (1996-12-01), None
patent: 9-232685 (1997-09-01), None
patent: 2001-244499 (2001-09-01), None
patent: 3230638 (2001-09-01), None
patent: 2003-86836 (2003-03-01), None
patent: 2003-229599 (2003-08-01), None
patent: WO 03/065465 (2003-08-01), None
Y. Hosokawa, et al.; “High-power ohmic-electrodes dispersive AlGaInP double-hetero structure yellowish-green light-emitting diodes”; Journal of Crystal Growth 221 (2000); pp. 652-656.
Iwao Teramoto; “Introduction of Semiconductor Device,” Mar. 30, 1995, First Edition, Baifukan Co., Ltd., p. 24, line 16 to line 17, Partial English translation.
Shiro Yoshizawa, et al.; Industrial Chemistry Basic Lecture 5; “Inorganic Industrial Chemistry,” Asakura Publishing Co., Ltd., Feb. 25, 1973, 6th Edition, pp. 169 and 205-208, Partial English translation.
Y. Kumasiro et al.; Journal of Solid State Chemistry; “Preparation and Electrical Properties of Boron and Boron Phosphide Films Obtained by Gas Source Molecular Beam Deposition,” Apr. 1997, pp. 269-272.
“Duffy Inorganic Chemistry,” Hirokawa Publishing Co. Ltd., Tokyo, Fifth Edition, Apr. 15, 1971, p. 249, lines 24-26, Partial English translation.
Journal of the Korean Association of Crystal Growth; “Metalorganic VPE growth of GaInP and related semiconductors for mobile communication device application,” Apr. 27, 2001, vol. 11, No. 5, pp. 207-210.
Office Action for U.S. Appl. No. 12/121,461; mail date Dec. 28, 2009; confirmation No. 6922.
Nabekura Wataru
Takeuchi Ryouichi
Udagawa Takashi
Gurley Lynne A
Showa Denko K.K.
Sughrue & Mion, PLLC
Webb Vernon P
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