Compound semiconductor light-emitting device of gallium nitride

Details Compound semiconductor light-emitting device of gallium nitride Compound semiconductor light-emitting device of gallium nitride

1997-09-02

2000-05-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

060673095

ABSTRACT:
There is disclosed a compound semiconductor light-emitting device of gallium nitride series having high reliability, which can be operated by a low threshold current and a low operation voltage without deterioration. The device comprises a p-type semiconductor structure having high carrier concentration, which can easily form a low resistance p-side electrode, and which can uniformly implant carriers to an active layer highly efficiently. A p electrode contact layer having Mg added thereto is used as a p-type semiconductor layer. At least a Ga.sub.x2 In.sub.y2 Al.sub.z2 N (x2+y2+z2=1, 0.ltoreq.x2, z2.ltoreq.1, 0<y2.ltoreq.1) smoothing layer is formed on an active layer than the p-type contact layer. On a surface of the p-type contact layer, there is formed a layered structure having a Pt layer, and a Ti layer containing TiN, and a Ti layer in order. An alloy, formed of Pt-semiconductor, is formed between the p-type contact layer and the Pt layer.

REFERENCES:
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5821555 (1998-10-01), Saito et al.

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