Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-04-27
2010-06-08
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S094000, C257S098000, C257S099000, C257SE33025, C257SE33034, C257SE33045
Reexamination Certificate
active
07732832
ABSTRACT:
This pn-junction compound semiconductor light-emitting device includes a crystal substrate; an n-type light-emitting layer formed of a hexagonal n-type Group III nitride semiconductor and provided on the crystal substrate; a p-type Group III nitride semiconductor layer formed of a hexagonal p-type Group III nitride semiconductor and provided on the n-type light-emitting layer; a p-type boron-phosphide-based semiconductor layer having a sphalerite crystal type and provided on the p-type Group III nitride semiconductor layer; and a thin-film layer composed of an undoped hexagonal Group III nitride semiconductor formed on the p-type Group III nitride semiconductor layer, wherein the p-type boron-phosphide-based semiconductor layer is joined to the thin-film layer composed of an undoped hexagonal Group III nitride semiconductor.
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Machine Translation of JP 09-232685, Oba Yasuo, Sep. 5, 1997, “Semiconductor Light Emitting Device”.
Odawara et al., “Suppression of indium vaporization from GaN/GaInN superlattice by BP capping layer”, Journal of Crystal Growth 263 (2004) pp. 645-647.
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Jackson, Jr. Jerome
Kim Jay C
Showa Denko K.K.
Sughrue & Mion, PLLC
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