Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1996-04-22
1998-07-14
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 85, 257 97, 372 45, 372 46, 372 50, H01L 29205, H01L 3300
Patent
active
057808767
ABSTRACT:
After the active layer including indium is formed, the evaporation preventing layer is formed at a temperature which does not cause liberation of indium. The p-type Al.sub.x Ga.sub.1-x N (0.ltoreq.X.ltoreq.1) or the like is used for the evaporation preventing layer. Increasing the substrate temperature to as high as 1020.degree. C. for forming the upper cladding layer does not cause liberation of indium from the active layer because the evaporation preventing layer is provided. As a result, the composition ratio of indium can be easily controlled and the high-quality active layer and the high-quality interface between the active layer and the upper cladding layer can be provided.
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patent: 5583879 (1996-12-01), Yamazaki
patent: 5592501 (1997-01-01), Edmond
Nakamura, S., et al., "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" Applied Physics Letters (28 Mar. 1994) 64(13):1687-1689.
Jackson Jerome
Sharp Kabushiki Kaisha
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