Compound semiconductor light emitter

Details Compound semiconductor light emitter Compound semiconductor light emitter

1997-06-05

1999-11-02

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257103, 257749, H01L 3300, H01L 2940, H01L 2348

Patent

active

059775661

ABSTRACT:
A compound semiconductor light emitting element includes a light emitting region formed by a pn-junction between a first compound semiconductor layer of a first conductivity type and a second compound semiconductor layer of a second conductivity type. A first electrode is connected to the first compound semiconductor layer and is isolated from the second compund semiconductor layer. A current spreading layer is formed on the second compound semiconductor layer and a block is formed on the second compound semiconductor layer. A second electrode is formed on the block and is connected to the current spreading layer.

REFERENCES:
patent: 4232440 (1980-11-01), Bastek
patent: 4495514 (1985-01-01), Lawrence
patent: 5122844 (1992-06-01), Akiba et al.
patent: 5696389 (1997-12-01), Ishikawa
patent: 5767581 (1998-06-01), Nakamura

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