Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Graded composition
Reexamination Certificate
2005-02-15
2005-02-15
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Graded composition
C438S047000, C372S046012
Reexamination Certificate
active
06855570
ABSTRACT:
A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer104of a first conduction type formed on a substrate101, an active layer106formed on the first cladding layer, a second cladding layer108of a second conduction type formed on the active layer106, and a buried layer110formed on the second cladding layer108, the buried layer having an opening portion for constricting a current in a selected region of the active layer, wherein an upper portion of the second cladding layer108has a ridge portion, the ridge portion residing in the opening portion of the buried layer110, and the buried layer110does not substantially absorb light output from the active layer106, and the buried layer has a refractive index which is approximately identical with that of the second cladding layer108.
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Fourson George
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
Toledo F. L.
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