Compound semiconductor interface control using cationic ingredie

Details Compound semiconductor interface control using cationic ingredie Compound semiconductor interface control using cationic ingredie

1989-03-13

1991-06-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 437235, 437236, 437243, 437244, 148DIG56, 148DIG81, 148DIG118, 156654, 156655, 156662, 427 96, 357 232, 357 52, H01L 2100, H01L 2102, H01L 21306, H01L 2978

Patent

active

050213652

ABSTRACT:
Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

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