Compound semiconductor integrated circuit with a particular high

Details Compound semiconductor integrated circuit with a particular high Compound semiconductor integrated circuit with a particular high

1997-02-10

1998-04-14

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257612, H01L 310328, H01L 310336, H01L 29167

Patent

active

057395594

ABSTRACT:
A compound semiconductor integrated circuit having a high resistance layer consisting of a compound semiconductor to which oxygen is added as an impurity and an undoped compound semiconductor layer which are formed between a semi-insulating substrate and field effect transistors formed thereon sequentially from the semi-insulating substrate side is suited to a superspeed operation because the low frequency oscillation is suppressed.

REFERENCES:
patent: 5172197 (1992-12-01), Nguyen et al.
patent: 5276340 (1994-01-01), Yokohama et al.
patent: 5293084 (1994-03-01), Itoh et al.
IEEE Transactions on Electron Devices, vol. ED-34, No. 6, Jun. 1987 Mechanisms for Low-Frequency Oscillations in GaAs FET's, pp. 1239-1244.

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