Compound semiconductor integrated circuit having improved electr

Details Compound semiconductor integrated circuit having improved electr Compound semiconductor integrated circuit having improved electr

1993-03-17

1994-07-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257192, 257195, H01L 29784, H01L 310224

Patent

active

053291549

ABSTRACT:
An integrated circuit including a wafer having a GaAs substrate, an un-doped GaAs layer, and a GaAs active layer. This active layer may have an HEMT structure to improve its operation speed. Also, the substrate may a multi-layer structure to form a three dimensional capacitor. At least one mesa portion is formed on the substrate by removing a portion of the un-doped GaAs layer and GaAs active layer. A source electrode, for example, is formed on the mesa portion, and a ground electrode is formed on an exposed surface of the substrate. These electrodes are connected to each other by means of a wiring metal layer. As a result, the source electrode is easily grounded without using a long bonding wire.

REFERENCES:
patent: 4739385 (1988-04-01), Bethea et al.
patent: 4996163 (1991-02-01), Sasaki
patent: 5170228 (1992-12-01), Sasaki

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