Compound semiconductor integrated circuit device

Details Compound semiconductor integrated circuit device Compound semiconductor integrated circuit device

1985-11-26

1988-10-11

Larkins, William D.

357 60, 357 26, H01L 2904, H01L 2980

Patent

active

047775173

ABSTRACT:
An IC device comprising a plurality of FET's using a compound semiconductor, more specifically, a zincblende type semiconductor substrate, having a surface of a (111) plane. By use of this plane, differences of characteristics of the FET's depending on directions along which gates of the FET's are arranged when the gate length is made shorter are prevented, allowing arrangement of gates of the FET's in different directions, particularly perpendicular to each other, with making the gate length shorter to miniaturize and densify the device.

REFERENCES:
patent: 3603848 (1971-09-01), Sato et al.
patent: 3612960 (1971-10-01), Takeishi et al.
patent: 4268848 (1981-05-01), Casey et al.
Ghandi, VLSI Fabrication Principles (Wiley-Interscience, NY, 1983), pp. 10-14.
IEEE Transactions on Electron Devices, ED-31 (1984) Oct., No. 10, "Piezoelectric Effects in GaAs FET's and Their Role in Orientation-Dependent Device Characteristics," pp. 1377-1380.
Electronics Letters, vol. 15, No. 12, (1979) "CdTe/Langmuir-Film MIS Structures", pp. 335-336.
Solid-State Electronics, 1975, vol. 18, "Ion-Implanted Microwave Field-Effect Transistors in GaAs," pp. 349-353.

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