Patent
1987-03-30
1989-04-11
James, Andrew J.
357 55, 357 22, 357 16, 357 56, H01L 2702
Patent
active
048210900
ABSTRACT:
A compound semiconductor integrated circuit device including a heterojunction bipolar transistor and a field effect transistor. The heterojunction bipolar transistor has three compound semiconductor layers (type n-p-n or p-n-p) and makes a channel region or a channel-electron-supplying region of a field effect transistor with one of the three compound semiconductor layers.
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Fujitsu Limited
James Andrew J.
Mintel William A.
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